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| Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit: mm 2.10.1 s Features q q 0.425 1.250.1 0.425 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.00.2 1.30.1 0.65 3 2 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) 0.90.1 15 12 2.5 50 30 150 150 -55 ~ +150 V V V mA mA mW C C 0.70.1 Ratings Unit 0 to 0.1 0.20.1 1:Base 2:Emitter 3:Collector EIAJ:SC-70 S-Mini Type Package Marking symbol : 1U s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25C) Symbol ICBO IEBO hFE fT Cob | S21e NF |2 GUM Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 10mA VCE = 10V, IC = 10mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 20mA, f = 800MHz VCE = 10V, IC = 20mA, f = 800MHz VCE = 10V, IC = 5mA, f = 800MHz 9 12 12 14 1.3 2.5 40 4.5 1.2 GHz pF dB dB dB min typ max 100 1 Unit A A 0.15-0.05 +0.1 0.3-0 +0.1 1 Transistor PC -- Ta 240 30 Ta=25C 200 25 50 25C 2SC3934 IC -- VCE 60 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 160 20 IB=300A Ta=75C 40 -25C 120 15 250A 200A 30 80 10 150A 100A 50A 20 40 5 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 Ta=75C 25C -25C 0.3 1 3 10 30 100 0 0.1 0.3 IC/IB=10 240 hFE -- IC 8 VCE=10V 7 6 5 4 3 2 1 0 -1 fT -- IC Ta=25C VCE=10V Forward current transfer ratio hFE 200 160 Ta=75C 120 25C 80 -25C 40 1 3 10 30 100 Transition frequency fT (GHz) -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 1.2 NF -- IC IE=0 f=1MHz Ta=25C 8 7 Rg=50 VCE=10V f=800MHz 0.8 S11, S22 1 1.5 2 0.4 VCE=10V IC=20mA E: Earth 3 4 0.2 5 10 Collector output capacitance Cob (pF) 1.0 0.8 Noise figure NF (dB) 6 5 4 3 2 1 - 0.2 -3 - 0.6 -2 - 0.8 -1 -1.5 .2 .4 .6 .8 1 800MHz 500MHz 0.6 0 1.5 2 1000MHz 345 S22 800MHz 500MHz 10 -10 -5 -4 1000MHz 0.4 S11 0.2 - 0.4 0 1 3 10 30 100 0 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) 2 Transistor S12, S21 +90 +120 S21 500MHz 800MHz 1000MHz 180 -10 -15 -20 -25 -30 500MHz +60 1000MHz 800MHz VCE=10V IC=20mA E: Earth 2SC3934 +150 +30 5 10 15 S12 20 0 -150 -30 -120 -90 -60 3 |
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